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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1507
DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For color TV chroma output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

HAN INC
Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature
Collector-base voltage
SEM GE
Open base
CONDITIONS
Open emitter
OND IC
TOR UC
VALUE 300 300 7 0.2
UNIT V V V A W ae ae
Open collector
Collector power dissipation
TC=25ae
15 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance IC=10|I CONDITIONS A ;IE=0 MIN 300 300 7
2SC1507
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V V
IC=10mA ;IB=0 IE=10|I A ;IC=0
IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=10V IE=0; VCB=50V;f=1MHz IC=10mA ; VCE=30V 40 4
2.0 100 100 240 |I |I
V A A
Transition frequency

O Y 120-240
pF MHz
hFE classifications R 40-80
HAN INC
70-140
SEM GE
OND IC
TOR UC
40 80
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1507
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
3


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